Amid the access of acute ultraviolet (EUV) lithography in the market, suppliers of EUV affectation blanks are accretion their production. And a new player—Applied Materials—is attractive to access the market.
AGC and Hoya, the two basic suppliers of EUV affectation blanks, are abacus accommodation for these analytical apparatus that are acclimated for EUV photomasks. A affectation bare serves as the substrate for a photomask. Meanwhile, at several contempo events, Applied Abstracts has accustomed presentations about its efforts and accessible access in the EUV affectation bare business. Applied is developing next-generation EUV blanks, although it is still devising its action and hasn’t fabricated a academic advertisement in the arena.
Other dynamics are at comedy here. There is a abeyant accumulation arrears in the bazaar of low-defect EUV affectation blanks—and aerial prices. An EUV affectation bare with tighter specs can amount added than $100,000. That won’t stop chipmakers from application EUV lithography, but they do appetite bigger and cheaper blanks.
In bound assembly for years, an EUV affectation bare is a key basic acclimated in an EUV photomask. In affectation making, the action starts with the assembly of a affectation bare or substrate. Once the bare is fabricated by a affectation bare manufacturer, it is alien to a photomask maker and the affectation is candy on the substrate.
A photomask is appropriate to accomplish a chip. In the design-through-manufacturing flow, a chipmaker designs an IC, which is translated from a book architecture and again produced into a mask. The affectation is a adept arrangement for an IC design. Inside the fab, the affectation is placed in a lithography scanner. Ablaze is again projected through the affectation and acclimated to arrangement images on a wafer.
Fig. 1. EUV mask. The cushion assemblage in the bare is blooming to anatomy the mask. Source: GlobalFoundries
The ambition is to accomplish defect-free EUV affectation blanks and photomasks, because if the bare or affectation has a defect, the irregularities ability get printed on the wafer. But while the industry can aftermath EUV affectation blanks with tighter birthmark specs, there ability be a arrears of these articles as the industry ramps up EUV lithography. “The bigger botheration is the accumulation for low-defect blanks,” said Harry Levinson, arch at HJL Lithography, a consulting firm.
EUV affectation bare suppliers, meanwhile, are responding to the challenges. “We are currently in assembly and accept a roadmap for both birthmark abridgement and blueprint improvement,” said Geoff Akiki, admiral of Hoya Blanks, allotment of Hoya. “To accommodated this appeal ramp, Hoya has invested heavily in engineering assets and basic for accommodation expansion.”
Applied Materials, the credible newcomer in the business, additionally is investing, but it’s too anon to acquaint if it will adapt the landscape. Applied hopes to advantage its accessories ability to get a ballast in the market.
“We can brainstorm that a lot of abstracts engineering will be advancing in the approaching for next-generation EUV affectation blanks,” said Vibhu Jindal, administrator of new markets and alliances at Applied Materials, in a contempo presentation. “We are leveraging on the absolute technologies that we have, whether it’s in clean, deposition, planarization and all of this equipment. We will absolutely innovate some of this custom development for next-generation EUV affectation blanks.”
All told, the EUV affectation bare business is arduous with a bound chump base. To advice the industry accretion some insights, Semiconductor Engineering has taken a attending at the business.
Why EUV? EUV lithography—a next-generation technology that patterns tiny appearance on a chip—is affective into assembly afterwards years of delays. In an EUV scanner, a ability antecedent converts claret into ablaze at 13.5nm wavelengths, enabling the arrangement to book accomplished features.
Chipmakers charge EUV because it’s acceptable added difficult to arrangement the tiny appearance application today’s 193nm captivation lithography and assorted patterning. Multi-patterning uses assorted accomplish to abate the affection sizes of a structure, but it additionally increases the complication of the process.
EUV promises to abridge the process. “EUV lithography offers a adapted aisle that allows for absolute book of band and amplitude at 36nm angle and beneath and finer addresses issues like aeon time, intra-level bury and affectation calculation costs associated with multi-patterning,” said Sophie Thibaut, arch compose action development architect at TEL, in a contempo paper.
Meanwhile, in a above milestone, Samsung became the industry’s aboriginal chipmaker to put EUV into production. EUV is actuality acclimated for 7nm.
In contrast, TSMC beforehand this year confused into assembly at 7nm application 193nm captivation and multi-patterning. The branch affairs to admit EUV for its additional adaptation of 7nm, which is slated for the additional division of 2019.
Intel additionally affairs to use EUV at some point in the future. All chipmakers are application ASML’s EUV scanner, the NXE:3400B. With a 13nm resolution, the arrangement is able with a 246-watt EUV ability source, enabling a throughput of 125 wafers per hour (wph).
The complication of EUV has fabricated it added difficult to put into assembly than avant-garde thought, and it won’t be a bland alteration as EUV moves from R&D into the fab. For example, today’s 193nm scanners can run ceaseless at 250 wph. However, EUV uptimes hover about 70% to 80%, acceptation the arrangement is decumbent to work-flow stoppages.
Initially, EUV will action a few layers at 7nm and eventually 5nm. “The use of EUV in assembly will best acceptable be a aggregate with multi-patterning and immersion,” said Rich Wise, managing abstruse administrator at Lam Research. “For applications like close accidental vias, the use case for EUV charcoal strong, as the bury and aeon time amends for abounding passes of captivation lithography becomes problematic. For approved line/space patterns, these can be fabricated application multi-patterning either with EUV at a added airy angle or connected use of immersion. Added patterns abatement about average and crave a accurate application of the tradeoffs.”
Nonetheless, EUV has momentum. In one metric, EUV affectation shipments are accepted to access by twofold, from 1,041 in 2017 to 2,185 in 2018, according to a analysis from the eBeam Initiative. That’s a tiny allotment of all-embracing affectation shipments, as 587,233 photomasks will be delivered in 2018, up by 27% over aftermost year, according to survey.
“EUV masks went up 2X, which is expected. That’s a acceptable thing. But the numbers are bush compared to the all-embracing masks that are reported. But taken by itself, a 2X access is a able adumbration that the industry is accepting accessible for EUV,” said Aki Fujimura, arch authoritative of D2S.
Mask bare challenges Besides the scanner, added key genitalia to EUV are the photoresists and photomasks. Resists are polymers acclimated to actualize patterns.
The photomask starts off with the assembly of a affectation blank. For years, affectation bare vendors accept been authoritative blanks for today’s optical lithographic systems. In optical, the affectation bare consists of an blurred band of chrome on a bottle substrate.
Fig. 2: Fabrication of EUV mask. Source: Sematech
In contrast, an EUV affectation bare consists of a substrate based on a low thermal amplification material. In the flow, the substrate is developed, able and cleaned.
Then, a degradation apparatus deposits 40 to 50 alternating layers of silicon and molybdenum on top of a substrate, consistent in a multilayer assemblage that is 250nm to 350nm thick. On the stack, a apparatus deposits a ruthenium-based capping layer, followed by an cushion based on a tantalum material.
Making an EUV bare is challenging. “We accept fabricated abounding advances, which accept accustomed us leadership. But there are consistently added challenges avant-garde and, of course, the antagonism never sleeps,” Hoya’s Akiki said. “Control of defects is one of the key items in ramping up any technology and EUV blanks are abnormally sensitive. The bearings anon is a aggregate of abstruse challenges and continued apparatus availability advance times, accompanying with a accelerated access in demands from customers.”
In the flow, the EUV affectation bare assembly action can actualize defects, such as particulates, pits and bumps in the blank. Bare vendors accept bargain the birthmark numbers to single-digit figures, bottomward from hundreds several years ago. But any defects on the blanks are problematic.
“Defectivity challenges activate with the EUV blank, which is decidedly added circuitous to body than an optical blank, accustomed added acrimonious requirements for flatness, defectivity and cushion blur quality,” said James Westphal, administrator of business at KLA-Tencor.
There are two types of defects in EUV blanks—amplitude and phase. Amplitude defects are apparent particles and pits, which can annual adverse changes. Appearance defects are bumps and pits that are active in the stack, which can annual appearance changes.
Fortunately, the industry has developed affectation bare analysis accoutrement able of analysis defects. Then, chipmakers accept begin agency to avoid the birthmark problems.
In the flow, the birthmark is apparent and covered by an absorber. The bare is again alien to the affectation vendor. From there, the e-beam patterns the mask, but it avoids the birthmark application arrangement alive techniques.
Generally, meanwhile, today’s EUV blanks ambit from articles with beneath acrimonious birthmark specs for R&D purposes to production-grade affection with beneath defects.
There is an abounding accumulation of EUV affectation blanks with beneath acrimonious specs, but articles with tighter birthmark blueprint is a altered story. These EUV blanks are far from perfect, although they are acceptable abundant for the assembly planned for EUV in the abbreviate term, analysts said.
“Multilayer defects, clashing cushion defects on optical and EUV masks, cannot be repaired,” HJL’s Levinson said. “A few multilayer defects can be acceptable if all are abundantly small. A few defects can be covered by the cushion in the blooming affectation and accordingly don’t advance to printed defects.”
The botheration is that there may not be abundant EUV blanks with lower birthmark specs in the market, abnormally back EUV lithography ramps up.
Prices are addition issue. An EUV bare with bound specs and actinic inspections amount added than $100,000 each, almost 10 times added big-ticket than an optical blank, analysts said. However, a bare with beneath acrimonious specs costs far beneath than $100,000, analysts said.
That’s aloof the amount for the blank, and it doesn’t annual for the all-embracing amount of an EUV photomask, which is accepted to be expensive.
Who’s accomplishing what? In response, suppliers of EUV blanks are ramping up assembly with affairs to accommodated the affection and amount demands in the industry.
Recently, AGC broadcast its EUV affectation bare assembly in Japan. Meanwhile, Hoya makes EUV affectation blanks and complete optical blanks in Japan, while its Singapore armpit makes avant-garde optical blanks.
Hoya now affairs to install a high-volume accomplishment band for EUV blanks in Singapore. “Hoya is ascent accommodation to adjust with chump roadmaps, and has appear affairs for a new assembly ability in Singapore,” said Damian Thong, an analyst at Macquarie Group.
The accepted appeal for EUV blanks is a alloyed picture. So far, Hoya is seeing added appeal for R&D blanks with beneath acrimonious specs. “At this point, the appeal for engineering and appraisal blanks with beneath acrimonious birthmark blueprint is still actual heavy, and absolutely a aerial allotment of the all-embracing demand,” Hoya’s Akiki said.
For some time, Hoya has been in assembly and can aftermath blanks with tighter birthmark specs. “Our accepted EUV blanks are the world’s best and are actuality acclimated and evaluated by every aggregation application EUV. We will abide to drive bottomward the birthmark levels, of course, as we go forward,” Akiki said. “As volumes abound and yields increase, bazaar armament will behest the price. But historically, prices accept appear bottomward from antecedent offerings as the technology matures. That will charge to be counterbalanced adjoin the continuing investments needed.”
Meanwhile, Applied Abstracts is developing next-generation EUV affectation blanks in a ability in Singapore. It’s cryptic if it will acreage a current-generation product.
“What is Applied Abstracts accomplishing in that administration to drive some of this abstracts innovation? We are attractive at it from a holistic perspective,” Applied’s Jindal said.
Applied wants to re-engineer the EUV blank. For example, the behind of an EUV bare is based on a chrome nitride material. But for next-generation blanks, the behind requires harder abstracts to abate defects.
“We accept a chrome nitride variation,” Jindal said. “It shows a college analytical load, which agency it can accept college hardness, arch to a lower birthmark generation.”
Then, for next-gen blanks, the multilayer silicon/molybdenum assemblage requires bigger interfaces. “We accept looked at authoritative these interfaces by alteration the accouterments and action technology in a way we can get bluff interfaces. That interface engineering leads to aerial reflectivity,” he said.
Applied and others are additionally alive on abbreviation the array of the absorber, which will abate exceptionable 3D affectation effects.
To be sure, chipmakers would like to see added antagonism in the EUV bare business. It could advice addition affection and abate prices.
The botheration is that there are alone a few chipmakers that are inserting EUV, acceptation there is a bound chump abject for bare suppliers. This is already a all-a-quiver business archetypal in a boxy business environment.
Related Stories:
EUV’s New Botheration Areas
EUV Pellicle, Uptime And Resist Issues Continue
Next EUV Issue: Affectation 3D Effects
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